PABOEUF, D., VIJAYAKUMAR, D., JENSEN, O. B., THESTRUP, B., LIM, J., SUJECKI, S., LARKINS, E., LUCAS-LECLIN, G. and GEORGES, P., 2011. Volume Bragg Grating External Cavities for the Passive Phase Locking of High-brightness Diode Laser Arrays: Theoretical and Experimental Study Journal of the Optical Society of America. B, Optical physics. 28(5), 1289-1299 (In Press.)
KAUNGA-NYIRENDA, S., LIM, J. J., BULL, S. and LARKINS, E. C., 2011. Elimination of Numerical Underflow in the Modelling of Optoelectronic Devices using Multiple Precision In: Proceedings of the 11th International Conference on Numerical Simulation of Optoelectronic Devices , 5th - 8th September 2011, Rome.. 115-116
MALAGUTI, S., ARMAROLI, A., BELLANCA, G., TRILLO, S., KAUMGA-NYRIENDA, S., LIM, J., LARKINS, E., KRISTENSEN, P. T., YVIND, K., MORK, J., DUMEIGE, Y., GAY, M., COLMAN, P., COMBRIE, S. and DE ROSSI, A., 2011. Numerical Modeling in Photonic Crystals Integrated Technology: The COPERNICUS Project In: Proceedings of the 11th International Conference on Numerical Simulation of Optoelectronic Devices - NUSOD'11, 5th - 8th September,Rome. 133-134
KAUNGA-NYIRENDA, S., DLUBEK, M., PHILLIPS, A., SUJECKI, S., LIM, J. J. and LARKINS, E. C., 2010. Theoretical Investigation of the Role of Optically Induced Carrier Pulsations in Wave Mixing in SOAs Journal of the Optical Society of America. B, Optical physics. 27(2), 168 - 178
DLUBEK, M. P., KAUNGA-NYIRENDA, S. N., PHILLIPS, A. J., SUJECKI, S., HARRISON, I. and LARKINS, E. C., 2010. Experimental Verification of the Existence of Optically Induced Carrier Pulsations in SOA's Optics Communications. 283(7), 1481 - 1484
ZHANG, Z., LIM, J. J., DUBREUIL, N., LARKINS, E. C., KENT, A. J., PAULIAT, G. and SUJECKI, S., 2010. Numerical Modelling of Photorefractive Crystals for Self-Adapting External Cavity Laser Mirrors Optical and Quantum Electronics. 41(9),
LU, W., CAMPION, R. P., FOXON, C. T. and LARKINS, E. C., 2010. A Theoretical Model for the MBE Growth of AlGaAsN using Ammonia as the N Source Journal of Crystal Growth. 312, 1029 - 1035
LIM, J. J., SUJECKI, S., LANG, L., ZHANG, Z., PABOEUF, D., PAULIET, G., LUCAS-LECLIN, G., GEORGES, P., MACKENZIE, R., BREAM, P., BULL, S., HASLER, K. H., SUMPF, B., WENZEL, H., ERBERT, G., THESTRUP, B., PETERSEN, P. M., MICHEL, N., KRAKOWSKI, M. and LARKINS, E. C., 2009. Design and Simulation of Next-generation High-Power, High-Brightness Laser Diodes IEEE Journal of Selected Topics in Quantum Electronics. 15(3), 993 - 1008
AMUZUVI, C. K., BULL, S., LIM, J. J., SUJECKI, S. and LARKINS, E. C., 2009. Numerical Emulation of the Degradation of 975nm High Power Tapered Laser Bars In: Invited paper at the 2nd High Power Diode Lasers and Systems Meeting (HPDLS), Coventry, UK, October 2009.
LU, W., BULL, S., LIM, J. J., MACKENZIE, R., SUJECKI, S., ANDRIANOV, A., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P., FOXON, C. T. and LARKINS, E. C., 2009. Reliability Assessment and Degradation Analysis of 1.3um GaInNAs Lasers Journal of Applied Physics. 106(9), 093110-1 to 093110-7
LANG, L., LIM, J. J., BULL, S., THESTRUP, B., SUJECKI, S., MICHEL, N., PETERSEN, P. M., KRAKOWSKI, M. and LARKINS, E. C., 2009. Asymmetric Feedback External Cavity Laser Diodes: Comparison of Experiment and Simulation In: 2nd High Power Diode Lasers and Systems Meeting (HPDLS), Coventry UK, October 2009.
LU, W., LIM, J. J., BULL, S., ANDRIANOV, A., STADDON, C., FOXON, C. T., SADEGHI, M., WANG, S. M., LARSSON, A. and LARKINS, E. C., 2009. Independent Determination of In and N Concentrations in GaInNAs Alloys Semiconductor Science and Technology. 24(10), Art. No. 105016.
ZHANG, Z., PAULIAT, G., LIM, J. J., BREAM, P. J. DUBREUIL, N., KENT, A. J., LARKINS, E. C. and SUJECKI, S., 2009. Numerical Modelling of High-Power Self-Organising External Cavity Lasers Optical and Quantum Electronics. 40(14 - 15), 1117- 1121
LIM, J. J., MACKENZIE, R., SUJECKI, S., DUMITRESCU, M., WANG, S. M., SADEGHI, M., ADOLFSSON, G., GUSTAVSSON, J., LARSSON, A. and LARKINS, E. C., 2009. Static and Dynamic Performance Optimisation of a 1.3 um GalnNAs Ridge Waveguide Laser Optical and Quantum Electronics. 40(14 - 15), 1181 - 1186
LIM, J. J., LARKINS, E. C., BREAM, P. J., MICHEL, N., KRAKOWSKI, M. and SUJECKI, S., 2009. Spectroscopic Simulation of Tapered Laser Diodes In: Proceedings of the 2nd High Power Diode Lasers and Systems Meeting (HPDLS), 14th - 15th October 2009, Coventry.
LANG, L., LIM, J. J., SUJECKI, S. and LARKINS, E. C., 2009. Improvement of the Beam Quality of a Broad-Area Diode Laser using Asymmetric Feedback from an External Cavity Optical and Quantum Electronics. 40(14 - 15), 1097 - 1102
ZHANG, Z., LIM, J. J., BREAM, P. J., LARKINS, E. C., KENT, A. J., DUBREUIL, N., PAULIAT, G. and SUJECKI, S., 2009. Self-Organizing External Cavity Laser Diodes In: Proceedings of the 2nd High Power Diode Lasers and Systems Meeting (HPDLS) Coventry, 14th - 15th October, 2009..
LUCAS-LECLIN, G., PABOEUF, D., GEORGES, P., MICHEL, N., KRAKOWSKI, M., LIM, J., SUJECKI, S. and LARKINS, E. C., 2009. External-Cavity Designs for Phase Coupled Laser Diode Arrays In: Photonex '09, Coventry, UK..
ZHANG, Z., LIM, J. J., DUBREUIL, N., LARKINS, E. C., KENT, A. J., PAULIAT, G. and SUJECKI, S., 2009. Numerical Modelling of Photorefractive Crystals for Self-Adapting External Cavity Laser Mirrors In: MC3 NUSOD'09, Gwangju, Korea..
DUMITRESCU, M., WOLF, M., SCHULZ, K., WEI, Y. Q., ADOLFSSON, G., GUSTAVSSON, J., BENGTSSON, J., SADEGH, M., WANG, S., LARSSON, A., LIMD, J., LARKINS, E, MELANEN, P., UUSIMAA, P. and PESSA, M., 2009. 10 Gb/s Uncooled Dilute-Nitride Optical Transmitters Operating at 1.3 um In: Proceedings of the 2009 Conference on Optical Fiber Communication (OFC 2009). 1 - 3
BULL, S., AMUZUVI, C., TOMM, J. W., XIA, R., LIM, J. J., SUJECKI, S. and LARKINS, E., 2008. By Emitter Degradation Analysis in High Power Laser Bars: Experiment and Emulation In: Photonex '08, Coventry, UK. October 2008.
LIM, J. J., MACKENZIE, R., LANG, L., ZHANG, Z., BULL, S., BREAM, P.' LARKINS, E. and SUJECKI, S., 2008. State of the Art in High Brightness Laser Diode Simulation at the University of Nottingham In: Photonex '08, Coventry, U.K. October 2008.
MACKENZIE, R., BULL, S., LIM, J. J., CHAO, S., SUJECKI, S., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P. and LARKINS, E. C., 2008. Thermally Dependent Gain of 1.3 um Dilute Nitride Double Quantum Well Lasers Physica Status Solidi (C) - Conferences and Critical Reviews. 5(2), 490-494
MACKENZIE, R., LIM, J. J., BULL, S., SUJECKI, S. and LARKINS, E. C., 2008. An Investigation of Thermal Boundary Resistance in 1.3 um Edge-Emitting Dilute Nitride Quantum Well Laser Diodes Physica Status Solidi C: Current Topics in Solid State Physics. 5(2), 485-489
MACKENZIE, R., LIM, J. J., BULL, S., SUJECKI, S. and LARKINS, E. C., 2008. Inclusion of Thermal Boundary Resistance in the Simulation of High-Power 980nm Ridge Waveguide Lasers Optical and Quantum Electronics. 40(1), 373-377
PABOEUF, D., LUCAS-LECLIN, G., GEORGES, P., MICHEL, N., KRAKOWSKI, M., LIM, J., SUJECKI, S. and LARKINS, E., 2008. Narrow-Line Coherently Combined Tapered Diodes in a Talbot External Cavity with a Volume Bragg Grating Applied Physics Letters. 93(21), 211102 - 211102-3
LIM, J. J., MACKENZIE, R., SUJECKI, S., DUMITRESCU, M., WANG, S. M., SADEGHI, M., ADOLFSSON, G., GUSTAVSSON, J., LARSSON, A. and LARKINS, E. C., 2008. Static and Dynamic Performance Optimisation of a 1.3 um GalnNAs Ridge Waveguide Laser In: Proceedings of the 2008 International Conference on numerical Simulation of Optoelectronic Devices (NUSOD '08). 121 - 122
LIM. J. J., MACKENZIE, R., SUJECKI, S., SADEGHI, M., WANG, S. M., ADOLFSSON, G., WEI, Y. Q., LARSSON, A., MELANEN, P., UUSIMAA, P., GEORGE, A. A., SMOWTOWN, P. M. and LARKINS, E. C., 2008. Thermal Performance Investigation of DQW GalnNAs Laser Diodes Optical and Quantum Electronics. 40(5-6), 385-390
ZHANG, Z., PAULIAT, G., LIM, J. J., BREAM, P. J. DUBREUIL, N., KENT, A. J., LARKINS, E. C. and SUJECKI, S., 2008. Numerical Modelling of High-Power Self-Organising External Cavity Lasers In: Numerical Simulation of Optoelectronic Devices (NUSOD '08). 1st - 4th September, University of Nottingham, UK..
LANG, L., LIM, J. J., SUJECKI, S. and LARKINS, E. C., 2008. Improvement of the Beam Quality of a Broad-Area Diode Laser using Asymmetric Feedback from an External Cavity In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08). 1st - 4th September 2008. University of Nottingham, UK..
BORRUEL, L., ODRIOZOLA, H., TIJERO, J. M. G., ESQUIVIAS, I., SUJECKI, S. and LARKINS, E. C., 2008. Design Strategies to Increase the Brightness of Gain Guided Tapered Lasers Optical and Quantum Electronics. 40(1), 175 - 189
LU, W., CHAO, S., BULL, S., ANDRIANOV, A. V., GRANT, V. A., CAMPION R. P., FOXON, C. T., SADEGHI, M., WANG, S. M., LARSSON, A. and LARKINS, E. C., 2008. Photoluminescence Microscopy Investigation of Lattice Relaxation and Defect Formation Processes in Pseudomorphically Strained InGaAsN Multiple Quantum Wells Physica Status Solidi C - Current Topics in Solid State Physics. 5(2), 467 - 472
DLUBEK, M.P., PHILLIPS, A.J. and LARKINS, E.C., 2008. Optical signal quality metric based on statistical moments and Laguerre expansion Optical and Quantum Electronics. 40(8), 561-575
DUMIRESCU, M., WOLF, M., SCHULZ, K., WANG, S., LARSSON, A., SUJECKI, S., LARKINS, E, MELANEN, P., UUSIMAA, P., LAAKSO, A. and PESSA, M., 2008. Un-Cooled 10 Gb/s Dilute-Nitride Optical transmitters for the 1300nm Wavelength Range In: Proceedings of the 2008 International Semiconductor Conference (CAS 2008) Vol. 1. 61 - 70
DLUBEK, M.P., PHILLIPS, A.J. and LARKINS, E.C., 2008. Nonlinear evolution of Gaussian ASE noise in ZMNL fiber Journal of Lightwave Technology. 26(8), 891-898
BULL. S., TOMM, J. W. and LARKINS, E. C., 2008. Identification of Degradation Mechanisms in High-Power Laser Bars using By-Emitter Degardation Studies Journal of Materials Science: Materials in Electronics. 19, S145 - S149
DLUBEK, M.P., PHILLIPS, A.J. and LARKINS, E.C., 2008. Extinction ratio improvement using nonlinear four-wave mixing with assist beam Microwave and Optical Technology Letters. 50(8), 2079-2083
KOMSA, HP, AROLA, E, LARKINS, E and RANTALA, TT, 2008. Band Offset Determination Of The Gaas/Gaasn Interface Using The Density Functional Theory Method Journal Of Physics-Condensed Matter. 20(31), - BREAM, B., MACKENZIE, R., LIM, J. J., BULL, S., ANDRIANOV, KENT, A. J., SUJECKI, S. and LARKINS, E. C., 2007. Nonequilibrium Gain and Nonlinear Optical Response of QWs In: European Semiconductor Laser Workshop, Berlin, WIAS Institute, 20th November 2007..
MACKENZIE, R., LIM, J. J., BULL, S., SUJECKI, S. and LARKINS, E. C., 2007. An Investigation of Thermal Boundary Resistance in 1.3 um Dilute Nitride Quantum Well Lasers In: Proceedings of the E-MRS Spring Meeting, Sumposium F Novel Gain Materials and Devices based on III-V Compounds, Strasbourg, June 1st 2007..
MACKENZIE, R., LIM, J. J., BULL, S., CHAO, S., SUJECKI, S., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P. and LARKINS, E. C., 2007. Measurement of Optical Gain, Effective Group Index and Linewidth Enhancement Factor in 1.3um Dilute Nitride Double-Quantum-Well Lasers IET Journal of Optoelectronics. 1(6), 284 - 288
MACKENZIE, R., LIM, J. J., BULL, S., SUJECKI, S. and LARKINS, E. C., 2007. The Impact of Thermal Boundary Resistance in Optoelectronic Devices In: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '07). 15 - 16
MACKENZIE, R., LIM, J. J., BULL, S., DYKEMAN, R., SUJECKI, S., LARKINS, E. C., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P. and UUSIMAA, P., 2007. Thermal Performance of 1.3 um InGaAsN/GaAs Laser Diodes In: Proceedings of the European Semiconductor Laser Workshop, Berlin, September 14th - 15th 2007..
MACKENZIE, R., LIM, J. J., BULL, S., CHAO, S., SUJECKI, S., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P. and LARKINS, E. C., 2007. Measurement of Optical Gain, Effective Group Index and Linewidth Enhancement Factor in 1.3um Dilute Nitride Double-Quantum-Well Lasers In: IOP/SIOE GaInNAs One Day Meeting, Cardiff, April 2nd 2007..
MACKENZIE, R., LIM, J. J., BULL, S., CHAO, S., SUJECKI, S., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P. and LARKINS, E. C., 2007. Thermally Dependent Gain of 1.3 um Dilute Nitride Double Quantum Well Lasers In: Proceedings of the E-MRS Spring Meeting, Symposium F Novel Gain Materials and Devices Based on III-V Compounds. Strasbourg, 31st May 2007..
LIM, J. J., MACKENZIE, R., SUJECKI, S., SADEGHI, M., WANG, S. M., WEI, Y. Q., GUSTAVSSON, J. S., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P., GEORGE, A. A., SMOWTON, P. M. and LARKINS, E. C., 2007. Simulation of Double Quantum Well GalnNAs Laser Diodes IET Optoelectronics. 1(6), 260 - 265
MACKENZIE, R., LIM, J. J., KENT, A. J., SUJECKI, S. and LARKINS, E. C., 2007. The Impact of Hot-Phonons on the Performance of 1.3um Dilute Nitride Edge-Emitting Quantum Well Lasers In: Proceedings of Phonons 2007. Paris, July 16th - 20th 2007.
LIM, J. J., MACKENZIE, R., SUJECKI, S., SADEGHI, M., WANG, S. M., WEI, Y. Q., LARSSON, A., MELANEN, P., UUSIMAA, P., GEORGE, A. A., SMOWTON, P. M. and LARKINS, E. C., 2007. Thermal Performance Investigation of DQW GalnNAs Laser Diodes In: Proceedings of the 2007 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '07). 19 - 20
LIM, J. J., MACKENZIE, R., SUJECKI, S., SADEGHI, M., WANG, S. M., LARSSON, A., MELANEN, P., SIPILA, P., UUSIMAA, P., GEORGE, A. A., SMOWTON, P. M. and LARKINS, E. C., 2007. Thermal Performance Investigation of DQW GalnNAs Laser Diodes In: European Semiconductor Laser Workshop, Berlin. September 14th - 15th 2007..
DLUBEK, M.P., PHILLIPS, A.J. and LARKINS, E.C., 2007. Simple and Cost-Effective OSNR Monitoring Method based on Modulation Spectrum Assessment In: Proceedings of the 12th European Conference on Networks and Optical Communications (NOC) 2007. Kista, Sweden.. 168 - 175
BULL, S, BAEUMLER, M, JIMENEZ, J and LARKINS, E.C., 2007. Laser facet inspection by imaging techniques. In: TOMM, J.J and JIMENEZ, J., eds., Screening and Packaging Techniques for Highly Reliable Quantum-Well High-Power Laser Arrays McGaw-Hill Publishing Co. (In Press.)
TIJERO, J.M.G., ODRIOZOLA, H., BORRUEL, L., ESQUIVIAS, I., SUJECKI, S. and LARKINS, E.C., 2007. Enhanced Brightness of Tapered Laser Diodes based on an Asymmetric Epitaxial Structure Photonic Technology Letters. 19, 1640 - 1642
OUDART, O., NAGLE, J., TOMM, J.W., LARKINS, E.C. and BULL, S., 2007. Failure Prediction of High-Power Laser Bars. In: TOMM, J.J AND JIMENEZ, ed., Screening and Packaging Techniques for Highly Reliable Quantum-Well High-Power Laser Arrays McGraw-Hill Publishing Co..
ODRIOZOLA, H., TIJERO, J. M.G., BORRUEL, L., ESQUIVIAS, I., WENZEL, H., DITTMAR, F., PASCHKE, K., SUMPF, B., ERBERT, G., SUJECKI, S. and LARKINS, E. C., 2007. High Power 980 nm Tapered Lasers with Separate Contacts: Numerical Simulation and Comparison with Experiments In: Proceedings of the 2007 International Quantum Electronics Conference and the European Conference on Lasers and Electro-Optics. (CLEOE-IQEC 2007).
ODRIOZOLA, H., TIJERO, J. M.G., BORRUEL, L., SUJECKI, S., LARKINS, E. C. and ESQUIVIAS, I., 2007. Simulation of Tapered Lasers with Seperate Contacts In: Proceedings of the 2007 Spanish Conference on Electron Devices. 56 - 59
TOMM, J.W., JIMENEZ, J., OUDART, M., NAGLE, J., LARKINS, E.C. and BULL, S., 2007. Degradation Modes and Related Defects in High-Power Laser Bars. In: TOMM, J.J AND JIMENEZ, ed., Screening and Packaging Techniques for Highly Reliable Quantum-Well High-Power Laser Arrays McGraw-Hill Publishing Co..
GRANT, V.A., CAMPION, R.P., FOXON, C.T., LU, W., CHAO, S. and LARKINS, E.C., 2007. Optimisation of RF Plasma Sources for the MBE Growth of Nitride and Dilute Nitride Semiconductor Material Semiconductor Science and Technology. 22, 15 - 19
DUMITRESCU, M., LARSSON, A., WEI, Y., LARKINS, E., UUSIMAA, P., SCHULZ, K. and PESSA, M., 2007. High-performance 1.3um Dilute-Nitride Edge-Emitting Lasers In: Proceedings of the 2007 International Semiconductor Conference (CAS 2007). Vol.1. 165 -174
BREAM, P.J., LIM, J.J., BULL, S., ANDRIANOV, A.V., SUJECKI, S. and LARKINS, E.C., 2006. The impact of nonequilibrium gain in a spectral laser diode model Optical and Quantum Electronics. 38(12-14), 1019-1027 BULL, S., ANDRIANOV, A.V., WYKES, J.G., LIM, J.J., SUJECKI, S., AUZANNEAU, S.C., CALLIGARO, M., LECOMTE, M., PARILLAUD, O., KRAKOWSKI, M. and LARKINS, E.C., 2006. Quantitative imaging of intracavity spontaneous emission distributions using tapered lasers with windowed backside contacts IEE Proceedings - Optoelectronics. 153, 2 - 7 ODRIOZOLA, H., MICHEL, N., TIJERO, L., BORRUEL, R., IBANEZ, R., KRAKOWSKI, M., HASSIAOUI, I., CALLIGARO, M., PARILLAUD, O., SUJECKI, S. and LARKINS, E.C., 2006. Quasi-three dimensional simulation of 915nm ridge waveguide laser diodes In: Submitted to the 8th Reunion Nacional de Optica, 2006. Alicante, (Spain)..
BREAM, P.J., LIM, J.J., BULL, S., SUJECKI, S. and LARKINS, E.C., 2006. The Impact of Nonequilibrium Gain in a Spectral Laser Model In: Proceedings of NUSOD 06: 6th International Conference on Numerical Simulation of Optoelectronic Devices. Sep. 11th - 14th 2006. Singapore.. 41 - 42
BREAM, P.J., SUJECKI, S. and LARKINS, E.C., 2006. Numerically Efficient Representation of Ansiotropic Valence Bands in Semiconductor Optoelectronic Devices IEEE Photonics Technology letters. 18, 1374 - 1376
BREAM, P.J., SUJECKI, S. and LARKINS, E.C., 2006. Investigation of Nonequilibrium Steady State Gain in Semiconductor Quantum Wells In: IEE Proceedings of Semiconductor and Integrated Optoelectronics (SIOE) Conference. 299 - 307
PIPREK, J.: LARKINS, E.C. and YU, S.F., 2006. Introduction to the OQE special issue on "Numerical Simulation of Optoelectronic Devices" Optical and Quantum Electronics. 38(12 - 14), 933 - 934
BULL, S., TOMM, J.W., OUDART, M., NAGLE, J., SCHOLZ, C., BOUCKE, K., HARRISON, I. and LARKINS, E.C., 2005. By-emitter degradation analysis of high-power laser bars Journal of Applied Physics. 98, 063101 BREAM, P.J, BULL, S., HARRISON, I., SUJECKI, S. and LARKINS, E.C., 2005. Fourier transform analysis method for modeling the positions and properties of cavity defects in Fabry–Pérot laser diodes Applied Physics Letters. 86, 061104 BULL, S., ANDRIANOV, A.V., HARRISON, I., DORIN, M., KERR, R.B., NOTO, J. and LARKINS, E.C., 2005. A spectroscopically resolved photo- and electroluminescence microscopy technique for the study of high-power and high-brightness laser diodes IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 54(3), 1079 - 1088 LIM, J.J., BENSON, T.M. and LARKINS, E.C., 2005. Design of wide-emitter single-mode laser diodes IEEE Journal of Quantum Electronics. 41(4), 506-516 BORRUEL, L., ESQUIVIAS, I., MORENO, P., KRAKOWSKI, M., AUZANNEAU, S.C., CALLIGARO, M., PARILLAUD, O., LECOMTE, M., SUJECKI, S., WYKES, J. and LARKINS, E.C., 2005. Clarinet laser: semiconductor laser design for high-brightness applications Applied Physics Letters. 87(10), 101104 MICHEL, N., KRAKOWSKI, M., CALLIGARO, M., LECOMTE, M., PARILLAUD, O., BORRUEL, L., ESQUIVIAS, I., MORENO, P., SUJECKI, S., WYKES, J. and LARKINS, E.C., 2005. High-power and high-brightness lasers with an Al-free active region at 915 nm In: European Conference on Optical Communications (ECOC 2005), Glasgow.
KRAKOWSKI, M., CALLIGARO, M., MICHEL, N., LECOMTE, M., PARILLAUD, O., BORRUEL, L., ESQUIVIAS, I., MORENO, P., SUJECKI, S., WYKES, J. and LARKINS, E.C., 2005. Lasers avases de forte puissance et forte brillance sans aluminium dans la region active 915 nm In: Neuvime Colloque sur les Lasers et l''Optique Quantique (COLOQ 9).
ODRIOZOLA, H., BORRUEL, L., TIJERO, J.M., ESQUIVIAS, I., SUJECKI, S. and LARKINS, E.C., 2005. Losses of the unstable cavity in tapered laser diodes: Estimation from numerical simulataions In: Proceedings of the 5th International Conference on the Numerical Simulation of Optoelectronic Devices (NUSOD). 31-
ODRIOZOLA, H., BORRUEL, L., TIJERO, J.M.G., ESQUIVIAS, I., SUJECKI, S. and LARKINS, E.C., 2005. Perdidas de la cavidad instable en diodes laser acampanados. Losses of the unstable cavity in tapered laser diodes In: Proceedings of the 4th reunion Espanola de Optoelectronica, OPTEL 2005..
BREAM, P., SUJECKI, S. and LARKINS, E.C., 2005. Energy band calculations for dynamic gain models in semiconductor quantum well lasers In: Proceedings of the 5th International Conference on the Numerical Simulation of Optoelectronic Devices (NUSOD). 11-
BORRUEL. L., ODRIOZOLA, H., TIJERO, J.M.G., ESQUIVIAS, I., SUJECKI, S. and LARKINS, E.C., 2005. Design Strategies to Increase the Brightness of Gain Guided Tapered Lasers In: Proceedings of the International Workshop on Physics & Applications of Semiconductor Lasers (PHASE), 2005. Metz, France..
BORRUEL, L., ESQUIVIAS, I., GARCÍA-TIJERO, J.M., ODRIOZOLA, H., KRAKOWSKI, M., AUZANNEAU, S.C., MICHEL, N., SUJECKI, S. and LARKINS, E.C., 2005. Design and fabrication of high brightness semiconductor tapered lasers with a clarinet-like shape In: Proceedings of the Conference on Lasers and Electro-Optics.
TIJERO, M.G., RODRÍGUEZ, D., BORRUEL, L., SUJECKI, S., LARKINS, E.C. and ESQUIVIAS, I., 2005. Optimization of epitaxial layer design for high brightness tapered lasers In: Proceedings SPIE.
SUJECKI, S. and LARKINS, E.C., 2005. Bent waveguide laser cavities In: SPIE International Congress on Optics and Optoelectronics. Lasers and Applications. Vol. 5958. MICHEL, N., HASSIAOUI, I., LECOMTE, M., PARILLAUD, O., KRAKOWSKI, M., BORRUEL, L., GARCIA-TIJERO, J.M., ESQUIVIAS, I. and LARKINS, E.C., 2005. High-Power Diode Lasers with an Al-Free Active region at 915nm In: Proceedings of the SPIE European Symposium on Optics and Photonics for Security and Defense. Bruges, Belgium..
BULL, S., ANDRIANOV, A.V., HARRISON, I. and LARKINS, E.C., 2004. The study of strain and defects in high power laser diodes by spectroscopically resolved photoluminescence microscopy European Physical Journal - Applied Physics. 27(1 - 3), 469 - 473 BORRUEL, L., SUJECKI, S., MORENO, P., WYKES, J., KRAKOWSKI, M., SUMPF, B., SEWELL, P., AUZANNEAU, S.C., WENZEL, H., RODRIGUEZ, D., BENSON, T.M., LARKINS, E.C. and ESQUIVIAS, I., 2004. Quasi-3-D simulation of high-brightness tapered lasers IEEE Journal of Quantum Electronics. 40(5), 463-472 BORRUEL, L., SUJECKI, S., WYKES, J.G., SEWELL, P., BENSON, T.M., LARKINS, E.C. and ESQUIVIAS, I., 2004. Modeling of patterned contacts in tapered lasers IEEE Journal of Quantum Electronics. 40(10), 1384-1388 BULL, S., WYKES, J.G., ANDRIANOV, A.V., LIM, J.J., BORRUEL, L., SUJECKI, S., AUZANNEAU, S.C., CALLIGARO, M., KRAKOWSKI, M., ESQUIVIAS, I. and LARKINS, E.C., 2004. Imaging of spontaneous emission from 980 nm tapered lasers with windowed N-contacts European Physical Journal - Applied Physics. 27(1-3), 455-459 SUJECKI, S., BORRUEL, L., WYKES, J.G., SEWELL, P., BENSON, T.M., ESQUIVIAS, I. and LARKINS, E.C., 2004. Quasi-3D numerical analysis of asymmetries in 980nm tapered laser diodes In: Proceedings of 2004 6th International Conference on Transparent Optical Networks. 295-298
LIM, J.J., BENSON, T.M. and LARKINS, E.C., 2004. Design of Wide Emitter Single Mode Laser Diodes In: IEEE OQE, May 2004.
LIM, J.J., BENSON, T.M. and LARKINS, E.C., 2004. Investigation of factors influencing the brightness of borad-area high-power laser diodes In: Proceedings of the 4th International Conference on the Numerical Simulation of Optoelectronic Devices (NUSOD). 7-
BORRUEL, L., SUJECKI, S., WYKES, J.G., WENZEL, H., LARKINS, E.C. and ESQUIVIAS, I., 2004. Analysis of beam quality limitations in high brightness gain guided tapered lasers In: Proceedings of the 4th International Conference on the Numerical Simulation of Optoelectronic Devices (NUSOD). 9-
BENSON, T.M. and LARKINS, E.C., 2004. Band Gap Engineering in 2D Photonic Crystals: The influence of Element Shape and Rotational Angle In: ICTON 2004.
FAY,M.W., MOLDOVAN,G., HARRISON,I., LARKINS,E.C., FOXON,C.T., BALMER,R.S., SOLEY,D.E., HILTON,K.P., HUGHES,B.T., UREN,M.J., MARTIN,T. and BROWN,P.D., 2003. Characterisation of nitrides by energy filtered TEM and EELS Physica Status Solidi (C) - Conferences and Critical Reviews. 0(7), 2452-2455 XIA, R., ANDRIANOV, A.V., BULL, S., HARRISON, I., LANDESMAN, J.P. and LARKINS, E.C., 2003. Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes Optical and Quantum Electronics. 35(12), 1099 - 1106 SUJECKI, S., BORRUEL, L., WYKES, J., MORENO, P., SUMPF, B., SEWELL, P., WENZEL, H., BENSON, T.M., ERBERT, G., ESQUIVIAS, I. and LARKINS, E.C., 2003. Nonlinear properties of tapered laser cavities IEEE Journal of Selected Topics in Quantum Electronics. 9(3), 823-834 SUJECKI, S., WYKES, J.G., SEWELL, P., VUKOVIC, A., BENSON, T.M., LARKINS, E.C. and BORRUEL, L., 2003. Optical properties of tapered laser cavities IEE Proceedings. Optoelectronics. 150(3), 246-252 ZHANG, Y., LIM, J.J., BENSON, T.M., SEWELL, P., DODS, S.R.A. and LARKINS, E.C., 2003. Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction Optical and Quantum Electronics. 35(9), 887-901 WYKES, J.G., BONNYMAN, J.I., SEWELL, P., BENSON, T.M., SUJECKI, S. and LARKINS, E.C., 2003. Utilisation of parallel processing techniques to maximise the efficiency of an advanced high-power semiconductor laser model In: Proceedings International Workshop on Optical Waveguide Theory and Numerical Modelling.
BELKA, R., SUJECKI, S., BORRUEL, L., WYKES, J.G., ERBERT, G., ESQUIVIAS, I., SEWELL, P., BENSON, T.M., WENZEL, H., SUMPF, B. and LARKINS, E.C., 2003. Symulacje pólprzewodnikowych laserów duzej mocy z sekcja stozkowa In: II Krajowej Konferencji Elektroniki (II KKE). 443-
BORRUEL, L., SUJECKI, S., KRAKOWSKI, M., MORENO, P.D., WYKES, J.G., SEWELL, P., BENSON, T.M. and LARKINS, E.C., 2003. Beam Filamentation and Maximum Optical power in High brightness Tapered Lasers In: Oral Presentation, Physics and Simulation of Optoelectronic Devices XI Conference, Photonics West.
BORRUEL, L., SUJECKI, S., RODRGUEZ, D., WYKES, J.G., KRAKOWSKI, M., SEWELL, P., BENSON, T.M., LARKINS, E.C. and ESQUIVIAS, I., 2003. Beam filamentation and maximum optical power in high brightness tapered lasers In: Physics and simulation of optoelectronic devices XI. 423-431
BREAM,P.J., BULL,S., XIA,R., ANDRIANOV,A.V., HARRISON,I. and LARKINS,E.C., 2003. The influence of defects on the emission spectra of high power laser diodes In: Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003. 177
ANDRIANOV, A.V., NOVIKOV, S.V., LI, T., XIA, R., BULL, S., ZHURAVLEV, I.S., HARRISON, I., LARKINS, E.C. and FOXON, C.T., 2003. Luminescence from GaAs nanocrystals self-organised in GaN:As matrix grown by MBE In: Abstracts of VI Russian Conference on Physics of Semiconductors. 159-
BULL, S., ANDRIANOV, A.V., HARRISON, I. and LARKINS, E.C., 2003. Development of a spectroscopically resolved photoluminescence microscopy technique for studying strain and defects in high power laser diodes In: Europhysics Conference Abstracts - CLEO Europe 2003. CC4-04-MON-
LIM, J.J., BENSON, T.M. and LARKINS, E.C., 2003. Modal Discrimination in Broad Area High Power Laser Diodes In: Nordic Semiconductor Meeting.
BORRUEL, L., SUJECKI, S., KRAKOWSKI, M., WYKES, J.G., LARKINS, E.C. and ESQUIVIAS, I., 2003. Quasi three dimemsional simulation of ridge waveguide laser diodes In: Conferincia de Dispotivos Electronicos.
XIA, R., LARKINS, E.C., HARRISON, I., DODS, S.R.A., ANDRIANOV, A., MORGAN, J. and LANDESMAN, J.P., 2002. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars IEEE Photonics Technology Letters. 14(7), 893-895 XIA, R., LARKINS, E.C., HARRISON, I., ANDRIANOV, A.V., MORGAN, J.M. and LANDSMAN, J.P., 2002. The effect of mounting induced strain and defects on the properties of AlGaAs 808 nm laser diodes synthetic Metals. 127, 255- ZHANG, Y., LIM, J.J., BENSON, T.M., SEWELL, P. and LARKINS, E.C., 2002. Design of short-cavity, high-brightness 980 nm laser diodes with distributed phase correction Applied Physics Letters. 80(19), 3506-3508 LIM, J.J., BENSON, T.M., LARKINS, E.C. and SEWELL, P., 2002. Wideband finite-difference-time-domain beam propagation method Microwave and Optical Technology Letters. 34(4), 243-247 BORRUEL, L., ESQUIVIAS, I., SUJECKI, S., LARKINS, E.C., SEWELL, P., BENSON, T.M. and WYKES, J.G., 2002. Self-consistent electrical, thermal and optical model of high-brightness tapered lasers In: Physics and simulation of optoelectronic devices X. 355-366
SUJECKI, S., BORRUEL, L., WYKES, J.G., ERBERT, G., ESQUIVIAS, I., SEWELL, P., BENSON, T.M., WENZEL, H., SUMPF, B. and LARKINS, E.C., 2002. Nonlinear photon-carrier interactions in high power 735nm tapered laser diodes In: Proceedings of the 2nd International Conference on the Numerical Simulation of Optoelectronic Devices (NUSOD). 6-
SUJECKI, S., BORRUEL, L., WYKES, J.G., BENSON, T.M., SEWELL, P., MORENO, P.D., ESQUIVIAS, I. and LARKINS, E.C., 2002. Design of high power pump lasers for C-band EDFA amplifiers In: Proceedings of 2002 4th International Conference on Transparent Optical Networks. 146-150
ZHANG, Y., LIM, J.J., BENSON, T.M., SEWELL, P. and LARKINS, E.C., 2002. Novel design of laser diodes with distributed phase correction In: Proceedings of the 10th International Workshop on Optical Waveguide Theory and Numerical Modelling. 65-
BORRUEL, L., SUJECKI, S., SUMPF, B., MORENO, P.D., WYKES, J.G., KRAKOWSKI, M., ERBERT, G., SEWELL, P., CALLIGARO, M., BENSON, T.M. and LARKINS, E.C., 2002. High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis, In: IEEE 18th International Semiconductor Laser Conference.
WYKES, J.G., BORRUEL, L., SUJECKI, S., ESQUIVIAS, I., SEWELL, P., BENSON, T.M., LARKINS, E.C. and KRAKOWSKI, M., 2002. Hot-cavity modelling of high-power tapered laser diodes using wide-angle 3D FD-BPM In: 2002 IEEE/LEOS annual meeting. 91-92
WYKES, J.G., BORRUEL, L., SUJECKI, S., SEWELL, P., BENSON, T.M., LARKINS, E.C. and ESQUIVIAS, I., 2002. Convergence behaviour of coupled electromagnetic/electronic high power laser models In: The Fourth International Conference on Computation in Electromagnetics.
SUJECKI, S., WYKES, J.G., SEWELL, P., BENSON, T.M., LARKINS, E.C., BORRUEL, L., ESQUIVIAS, I., ROMERO, B., ERBERT, G., WENZEL, H. and SUMPF, B., 2002. Quasi-3D optoelectronic modelling of 730 nm tapered laser diodes In: Technical digest: summaries of papers presented at the Conference on Lasers and Electro-optics. 598-599
ANDRIANOV,A.V., XIA,R., BULL,S., WINSER,A.J., STADDON,C.R., HARRISON,I. and LARKINS,E.C., 2002. Near-infrared emission from MBE grown As-doped GaN In: Proceedings of the 26th International Conference on the Physics of Semiconductors.
XIA, R., HARRISON, I., LARKINS, E.C., ANDRIANOV, A.V., MORGAN, J.M., PARBROOK, P.J., BUTTON, C.C. and HILL, G., 2002. Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B93, 234-
DAVIS,C.S., ANDRIANOV,A.V., WINSER,A.J., XIA,R., STADDON,C.R., HARRISON,I. and LARKINS,E.C., 2002. MBE growth and characterisation of N-dilute GaAsN films on misoriented GaAs substrates In: Conference on Semiconductor and Integrated Optoelectronics (SIOE).
XIA, R., HARRISON, I., BEAUMENT, B., ANDRIANOV, A.V., MORGAN, J.M. and LARKINS, E.C., 2001. Spectrally resolved electroluminescence microscopy and µ-elecroluminescence investigation of GaN-based LEDS Journal of Crystal Growth. 230, 467- BELL, A., HARRISON, I., KORAKAKIS, D., LARKINS, E.C., HAYES, J.M. and KUBALL, M., 2001. Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN Journal of Applied Physics. 89, 1070- SUJECKI, S., WYKES, J.G., SEWELL, P., BENSON, T.M. and LARKINS, E.C., 2001. Optical properties of tapered laser cavities In: 3rd International Conference on Transparent Optical Networks. 55-
BORRUEL, L., ESQUIVIAS, I., SUJECKI, S., WYKES, J.G., BENSON, T.M., SEWELL, P. and LARKINS, E.C., 2001. Simulacion cuasitridimensional de diodos laser de alto brillo In: I Congresso Nacional de Sumulacion Cuasitridimensional de diodos laser de alto brillo, Spain 12-14 September 2001.
BORRUEL, L., ESQUIVIAS, I., SUJECKI, S., WYKES, J.G., BENSON, T.M., SEWELL, P. and LARKINS, E.C., 2001. Simulacion bidimensional de diodos laser de alto brillo Proceedings of the 2nd Spanish Meeting on Optoelectronics (OPTOEL). EMS25-
LAWS, G. M., LARKINS, E. C., HARRISON, I., MOLLOY, C. and SOMERFORD, D., 2001. Improved refractive index formulas for the Al~xGa~1~-~xN and In~yGa~1~-~yN alloys Journal of Applied Physics. VOL 89(PART 2), 1108-1115 ANDRIANOV, A.V., ORTON, J.W., BENSON, T.M., HARRISON, I., LARKINS, E.C., DAIMINGER, F.X., VASSILAKIS, E. and HIRTZ, J.P., 2000. Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes Journal of Applied Physics. 87, 3227- BELL, A., HARRISON, I., KORAKAKIS, D., LARKINS, E.C., HAYES, J.M. and KUBALL, M., 2000. A study of annealed Gan grown by molecular beam epitaxy using photoluminescence spectroscopy MRS Internet Journal of Nitride Semiconductor Research. 5, 51-
ESQUIVIAS, I., LARKINS, E.C., BURKNER, S., WEISSER, S. and ROSENZWEIG, J., 2000. Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique Applied Physics Letters. 77, 776- BLANT, A.V., NOVIKOV, S.V., CHENG, T.S., FLANNERY, L.B., HARRISON, I., CAMPION, R.P., KORAKAKIS, D., LARKINS, E.C., KRIBES, Y. and FOXON, C.T., 1999. Ga-metal inclusions in GaN grown on sapphire Journal of Crystal Growth. VOL 203(NUMBER 3), 349-354 ROMERO, B., ESQUIVIAS, I., WEISSER, S., LARKINS, E.C. and ROSENZWEIG, J., 1999. Carrier capture and escape processes in In<sub>0.25</sub>Ga<sub>0.75</sub>As-GaAs quantum-well lasers IEEE Photonics Technology Letters. 11, 779- KATSAVETS, N. I., LAWS, G. M., HARRISON, I., LARKINS, E. C., BENSON, T. M., CHENG, T. S. and FOXON, C. T., 1998. Study of GaN thin layers subjected to high-temperature rapid thermal annealing Semiconductors. VOL 32(NUMBER 10), 1048-1053 LARKINS,E.C., DODS,S.R.A., ANDRIANOV,A.V., MORGAN,J.HARRISON,I., BENSON,T.M. and ORTON,J.W., 1998. A highly integrated system for a fast, flexible and comprehensive characterisation of semiconductor lasers In: Lasers and Electro-Optics Europe, 1998. 1998 CLEO/Europe. 98
LAWS,G.M., REN,G.B., HARRISON,I., LARKINS,E.C., ORTON,J.W., HOOPER,S.E. and CHENG,T.S., 1998. Electrical and optical characterisation of homojunction gallium nitride light emitting diodes In: Nitride Semiconductors. 1113-
HARRISON, I., ANDRIANOV, A.V., ORTON, J.W., LARKINS, E.C., NAGLE, J., ASONEN, H., NAPPI, J. and ESQUIVIAS, I., 1997. Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes In: European Semiconductor Laser Workshop.
ANDRIANOV, A.V., ORTON, J.W., HARRISON, I., LARKINS, E.C., DAIMINGER, F.X., VASSILAKIS, E. and HIRTZ, J.P., 1997. Photoluminescence microscopy of mirror facets of board area laser diodes In: IEEE LEOS 1997 Annual Meeting Proceedings. 68-
LAWS, G.M., REN, G.B., HARRISON, I., LARKINS, E.C., ORTON, J.W. and HOOPER, S.E., 1997. Electrical and optical characterisation of homojunction gallium nitride emitting diodes Materials Research Society Symposium Proceedings.
TORRE, M. S., ESQUIVIAS, I., ROMERO, B., CZOTSCHER, K., WEISSER, S., RALSTON, J. D., LARKINS, E., BENZ, W. and ROSENZWEIG, J., 1997. Lateral carrier profile for mesa-structured InGaAs/GaAs lasers Journal of Applied Physics. VOL 81(NUMBER 9), 6268-6271 ARIAS, J., ESQUIVIAS, I., BURKNER, S., CHAZAN, P., RALSTON, J.D., LARKINS, E.C., MIKULLA, M., WEISSER, S. and ROSENZWEIG, J., 1997. Characterisation and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements In: Proceedings SPIE. 534-
CZOTSCHER, K., LARKINS, E. C., WEISSER, S., BENZ, W., DALEIDEN, J., FLEISSNER, J., MAIER, M., RALSTON, J. D. and ROSENZWEIG, J., 1997. Uncooled High-Temperature (130 øC) Operation of InGaAs-GaAs Multiple Quantum-Well Lasers at 20 Gb/s IEEE Photonics Technology letters. VOL 9(NUMBER 5), 575-577 SAH, R.E., RALSTON, J.D., DALEIDEN, J., LARKINS, E.C., WEISSER, S., FLEISSNER, J. and BENZ, W., 1996. Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures Journal of Electronic Materials. 25, 1446-
EHRET, S., SCHNEIDER, H. and LARKINS, E.C., 1996. Photocurrent anomaly in double-barrier quantum well structures In: Proceedings SPIE. 117-
BURKNER, S., BAEUMLER, M., WAGNER, J., LARKINS, E.C., ROTHEMUND, W. and RALSTON, J.D., 1996. Influences of interdiffusion processes on optical and structural properties of pseudomorphic In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs multiple-quantum-well structures Journal of Applied Physics. 79, 6818- CZOTSCHER, K., LARKINS, E.C., WEISSER, S., SCHONFELDER, A., BENZ, W., DALEIDEN, J., FLEISSNER, J., MAIER, M., RALSTON, J.D., ROMERO, B. and ROSENZWEIG, J., 1996. Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions In: SPIE International Symposium - Lasers and Integrated Optoelectronics: High Speed Semiconductor Sources.
MIKULLA, M., CHAZAN, P., RAYNOR, B., DALEIDEN, J., LARKINS, E.C., SCHMIT, A. and TRANKLE, G., 1996. Single growth step InGaAs DBR laser diodes with first order CAIBE-etched gratings In: Technical Digest of CLEO ''96.
CZOTSCHER, K., WEISSER, S., LARKINS, E. C., FLEISSNER, J., RALSTON, J. D., SCHOENFELDER, A., ROSENZWEIG, J. and ESQUIVIAS, I., 1996. Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers Applied Physics Letters. VOL 69(NUMBER 21), 3158-3160 ARIAS, J., RALSTON, J.D., ESQUIVIAS, I., LARKINS, E.C., WEISSER, S., ROSENZWEIG, J., SCHONFELDER, A. and MAIER, M., 1996. Carrier profile for In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs multi-quantum well lasers from capacitance-voltage measurements Applied Physics Letters. 68, 1138- ESQUIVIAS, I., ROMERO, B., WEISSER, S., CZOTSCHER, K., RALSTON, J.D., LARKINS, E.C., SCHONFELDER, A., MIKULLA, M., FLEISSNER, J. and ROSENZWEIG, J., 1996. Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers In: Proceedings SPIE. 17-
SCHONFELDER, A., CZOTSCHER, K., LARKINS, E.C., WEISSER, S., RALSTON, J.D. and ROSENZWEIG, J., 1996. Optical gain and spontaneous emission in InGaAs/GaAs MQW laser diodes Journal of Applied Physics. 80, 582- RALSTON, J.D., LARKINS, E.C., EISELE, K., WEISSER, S., BURKNER, S., SCHONFELDER, A., DALEIDEN, J., CZOTSCHER, K., ESQUIVIAS, I., FLEISSNER, J., SAH, R.E., MAIER, M., BENZ, W. and ROSENZWEIG, J., 1996. Advanced epitaxial-growth and device processing techniques for ultra-high-speed (> 40 GHz) directly-modulated semiconductor-lasers In: Proceedings SPIE. 30-
WEISSER, S., LARKINS, E. C., CZOTSCHER, K., BENZ, W., DALEIDEN, J., ESQUIVIAS, I., FLEISSNER, J., RALSTON, J. D., ROMERO, B. and SAH, R. E., 1996. Damping-Limited Modulation Bandwidths Up to 40 GHz in Undoped Short-Cavity In~0~.~3~5Ga~0~.~6~5As-GaAs Multiple-Quantum-Well Lasers IEEE Photonics Technology letters. VOL 8(NUMBER 5), 608-610 SCHNEIDER, H., KOIDL, P., SCHONBEIN, C., EHRET, S., LARKINS, E.C. and BIHLMANN, G., 1996. Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors Superlattices and Microstructures. 19, 347- MIKULLA, M., BENZ, W., DALEIDEN, J., FLEISSNER, J., KAUFEL, G., LARKINS, E.C., MAIER, M., RALSTON, J.D. and WETZEL, A., 1995. High power tapered InGaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy In: International symposium on compound semiconductors.
SUTTER, D.H., SCHNEIDER, H., WEISSER, S., RALSTON, J.D. and LARKINS, E.C., 1995. Picosecond spectroscopy of optically modulated high-speed laser diodes Applied Physics Letters. 67, 1809- RALSTON, J.D., LAUGHTON, F.R., CHAZON, P., LARKINS, E.C., MAIER, M., ABD RAHMAN, M.K. and WHITE, I.H., 1995. Tapered InGaAs/GaAs MQW lasers with carbon modulation doping and reduced filamentation Electronics Letters. 31, 651- MIKULLA, M., BENZ, W., DALEIDEN, J., FLEISSNER, J., KAUFEL, G., WETZEL, A., LARKINS, E.C., MAIER, M., RALSTON, J.D. and ROSENZWEIG, J., 1995. Diodes laser trapezoidales de puissance (7.2 W QCW) a 1.02 µm In: Proceedings of journees national d''optique guidee.
LARKINS, E.C. and HARRIS, J.S., 1995. Molecular Beam Epitaxy of High Quality GaAs and AlGaAs. In: Molecular Beam Epitaxy: Applications to Key Materials
BURKNER, S., LARKINS, E.C., BAEUMLER, M., WAGNER, J., ROTHEMUND, W., FLEMIG, G. and RALSTON, J.D., 1995. Impurity-free selective interdiffusion of pseudomorphic In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs laser and modulator structures Materials Science and Technology. 11, 840-
WEISSER, S., LARKINS, E.C., CZOTSCHER, K., BENZ, W., DALEIDEN, J., ESQUIVIAS, I., FLEISSNER, J., MAIER, M., RALSTON, J.D., ROMERO, B., SAH, R.E., SCHONFELDER, A. and ROSENZWEIG, J., 1995. CW direct modulation bandwidths up to 40 GHz in short-cavity In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW lasers with undoped active regions In: Proceedings of European Conference on Optical Communications (ECOC) 1995. 1015-
WEISSER, S., LARKINS, E.C., CZOTSCHER, K., BENZ, W., DALEIDEN, J., FLEISSNER, J., MAIER, M., RALSTON, J.D., ROMERO, B., SCHONFELDER, A. and ROSENZWEIG, J., 1995. 37 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with C-doped active regions In: IEEE LEOS 1995 Annual Meeting Conference Proceedings. A91-
SUTTER, D.H., SCHNEIDER, H., ROSENZWEIG, J., RALSTON, J.D. and LARKINS, E.C., 1995. Schaltung der Verstarkung in schnellen Laserdioden: Signalanalyse fur mittlere Intensitaten In: Deutschen Physikalischen Gesellschaft. 1160-
BURKNER, S., RALSTON, J.D., WEISSER, S., LARKINS, E.C., SAH, R.E. and FLEISSNER, J., 1995. Wavelength tuning of high-speed InGaAs/GaAs/AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion IEEE Photonics Technology Letters. 7, 941- BURKNER, S., MAIER, M., LARKINS, E.C., ROTHEMUND, W., O''REILLY, E.P. and RALSTON, J.D., 1995. Process parameter dependence of impurity-free interdiffusion in GaAs/Al<sub>x</sub>Ga<sub>l-x</sub>As and In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs MQW''s Journal of Electronic Materials. 24, 805-
EHRET, S., SCHNEIDER, H., LARKINS, E.C. and RALSTON, J.D., 1995. Tunneling-assisted thermionic emission in double-barrier quantum well structures Journal of Applied Physics. 77, 2537- LARKINS, E.C., BENZ, W., ROTHEMUND, W., WEISSER, S., SCHONFELDER, A., FLEISSNER, J., JANTZ, W., ROSENZWEIG, J. and RALSTON, J.D., 1995. Improved performance from pseudomorphic In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs MQW lasers with low growth temperature Al<sub>x</sub>Ga<sub>l-x</sub>As short-period superlattice cladding IEEE Photonics Technology Letters. 7, 16- SAH, R.E., RALSTON, J.D., EICHIN, G., DISCHLER, B., ROTHEMUND, W., WAGNER, J. and LARKINS, E.C., 1995. Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum well structures Thin Solid Films. 259, 225- RALSTON, J.D., ESQUIVIAS, I., LARKINS, E.C., WEISSER, S., ROSENZWEIG, J., SCHONFELDER, A. and MAIER, M., 1994. Carrier profile for In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs multi-quantum well lasers from capacitance-voltage measurements In: Proceedings of 1st International Conference on Materials for Microelectronics. 218-
RALSTON, J.D., ESQUIVIAS, I., LARKINS, E.C., WEISSER, S., ROSENZWEIG, J. and MAIER, M., 1994. Capacitance-voltage carrier profiling of In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW laser diodes with p-doping In: Proceedings of 14th General Condensed Matter Division European Physical Society.
SCHNEIDER, H., RALSTON, J.D., O''REILLY, E.P., WEISSER, S. and LARKINS, E.C., 1994. Gain switching in high-speed semiconductor lasers: Intermediate-signal analysis Applied Physics Letters. 65, 661- LARKINS, E.C., ROTHEMUND, W., WAGNER, J., BAEUMLER, M., BURKNER, S., BENZ, W., WEISSER, S., SCHONFELDER, A., FLEMIG, G., BRENN, R., FLEISSNER, J., JANTZ, W., ROSENZWEIG, J. and RALSTON, J.D., 1994. MBE growth of GaAs-based pseudomorphic lasers: Key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding In: IEEE/LEOS Summer Topical Meeting on Optoelectronic Materials Growth and Processing.
HUMBACH, O., SOYKA, R., STOHR, A., BURKNER, S., RALSTON, J.D., LARKINS, E.C. and JAGER, D., 1994. Partial interdiffusion of InGaAs/GaAs MQW modulators for photonic integration In: Technical Digest of Integrated Photonics Research, OSA. 157-
SEELMANN-EGGEBERT, M., KLAUSER, R., CAREY, G.P., LARKINS, E.C., MEISEN, P. and RICHTER, H.J., 1994. Assessing surface reconstructions by angle-scanned X-ray photoelectron diffraction In: Proceedings of 4th International Conference on the Structure of Surfaces.
SCHNEIDER, H., EHRET, S., LARKINS, E.C., RALSTON, J.D. and KOIDL, P., 1994. A novel transport mechanism for photovoltaic quantum well intersubband infrared detectors In: Quantum Well Intersubband Transition Physics and Devices NATO ASI Series E: Applied Sciences. 187-
RALSTON, J.D., WEISSER, S., EISELE, K., SAH, R.E., LARKINS, E.C., ROSENZWEIG, J., FLEISSNER, J. and BENDER, K., 1994. Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers IEEE Photonics Technology Letters. 6, 1076- BAEUMLER, M., LARKINS, E.C., BACHEM, K.H., BERNKLAU, D., RIECHERT, H., RALSTON, J.D. and JANTZ, W., 1994. Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography In: Institute of Physics Conference Series. 169-
SCHNEIDER, H., VINATTIERI, A., SHAH, J., EHRET, S., LARKINS, E.C. and ROSSMANITH, M., 1994. Non-resonant electron capture in GaAs/A1As/A1GaAs double-barrier quantum well infrared detectors Applied Physics Letters. 64, 1015- ESQUIVIAS, I., WEISSER, S., SCHONFELDER, A., RALSTON, J.D., TASKER, P.J., LARKINS, E.C., FLEISSNER, J., BENZ, W. and ROSENZWEIG, J., 1994. DC and high-frequency properties of In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs strained-layer MQW laser diodes with p-doping In: Institute of Physics Conference Series. 265-
RALSTON, J.D., EISELE, K., SAH, R.E., LARKINS, E.C., WEISSER, S., ROSENZWEIG, J., FLEISSNER, J. and BENDER, K., 1994. Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers In: Proceedings of the 14th IEEE International Semiconductor Laser Conference. 211-
LARKINS, E.C., THADEN, H., BETSCHE, H., EICHIN, G. and RALSTON, J.D., 1994. Elimination of long-term calibration drift in MBE by cooling the source flange Journal of Vacuum Science and Technology B. 12, 3220- LARKINS, E.C., SCHNEIDER, H., EHRET, S., FLEISSNER, J., DISCHLER, B., KOIDL, P. and RALSTON, J.D., 1994. Influences of MBE Growth Processes on Photovoltaic 3-5 µm Intersubband Photodetectors IEEE Transactions on Electron Devices. 41, 511-518- SCHNEIDER, H., EHRET, S., LARKINS, E.C., RALSTON, J.D. and KOIDL, P., 1994. Photovoltaic QW intersubband detectors: operational principle, theoretical limits, and dynamical behavior In: Proceedings of the 186th meeting of the electrochemical society.
BENDER, G., SCHNEIDER, H., SCHWARTZ, K. and LARKINS, E.C., 1994. Charakterisierung des Hochgeschwindigkeitsverhaltens von p-i-n Photodioden mittels nichtlinearer Photostromspektroscopie In: Deutschen Physikalischen Gesellschaft. 1065-
SCHNEIDER, H., EHRET, S., LARKINS, E.C., KOIDL, P. and RALSTON, J.D., 1994. Quantumwell-Intersubband-IR-Detektoren fur FPA-Kameras und Heterodyn-Anwendungen bei 3-5 µm und 8-12 µm In: Wissenschaft zum Technischen Universitaet Dresden. 1113-
EHRET, S., SCHNEIDER, H. and LARKINS, E.C., 1994. Einfluss von Dotierstoffverschleppung und Tunnelbarrieren-Dicke auf das Photostrom- und Dunkelstromverhalten von Doppelbarrieren Quantentopf Infrarotdetektoren In: Deutschen Physikalischen Gesellschaft. 1102-
FLEMIG, G., BRENN, R., LARKINS, E.C., BURKNER, S., BENDER, G., BAEUMLER, M. and RALSTON, J.D., 1994. Ion-channeling studies of In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs strained-layer single and multiple quantum-well structures Journal of Crystal Growth. 143, 29- LARKINS, E.C., BAEUMLER, M., WAGNER, J., BENDER, G., HERRES, N., MAIER, M., ROTHEMUND, W., FLEISSNER, J., JANTZ, W., RALSTON, J.D., FLEMIG, G. and BRENN, R., 1994. MBE growth of In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQWs for high-speed lasers: relaxation limits and factors influencing dislocation glide In: Institute of Physics Conference Series. 523-
SCHNEIDER, H., EHRET, S., LARKINS, E.C., VINATTIERI, I. and SHAH, J., 1994. Capture of carriers excited by interband and intersubband absorption in GaAs/AlAs/AlGaAs double-barrier quantum wells Superlattices and Microstructures. 16, 331- RALSTON, J.D., EISELE, K., SAH, R.E., FLEISSNER, J., BENDER, G., LARKINS, E.C. and WEISSER, S., 1994. Enhanced dry-etched mirror process for high-speed and monolithically integrated GaAs-based MQW lasers In: IEEE/LEOS Summer Topical Meeting on Optoelectronic Materials Growth and Processing.
BENDER, G., LARKINS, E.C., SCHNEIDER, H., RALSTON, J.D. and KOIDL, P., 1994. Strain relaxation in In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs MQW Structures In: Institute of Physics Conference Series. 385-
SCHNEIDER, H., EHRET, S., LARKINS, E.C., RALSTON, J.D. and KOIDL, P., 1994. Photovoltaic quantum well intersubband infrared detectors by internal electrical fields In: Institute of Physics Conference Series. 295-
BURKNER, S., BAEUMLER, M., WAGNER, J., LARKINS, E.C., FLEMIG, G., ROTHEMUND, W. and RALSTON, J.D., 1994. Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs MQW lasers In: IEEE LEOS 1994 Annual Meeting Proceedings. 48-
WEISSER, S., RALSTON, J.D., EISELE, K., SAH, R.E., HORNUNG, J., LARKINS, E.C., TASKER, P.J., BENZ, W., BONNER, W., FLEISSNER, J. and BENDER, K., 1994. Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents In: Proceedings of the European Conference on Optical Communications (ECOC) 1994. 973-
RALSTON, J.D., WEISSER, S., SCHONFELDER, A., LARKINS, E.C., ROSENZWEIG, J., BRONNER, W., HORNUNG, J. and KOHLER, K., 1994. Device and process technology for monolithic high-speed, low-chirp semiconductor laser transmitters In: Technical Digest of CLEO ''94. 275-
LARKINS, E.C., ROTHEMUND, W., MAIER, M., WANG, Z.M., RALSTON, J.D. and JANTZ, W., 1993. MBE growth optimization of In<sub>y</sub>Ga<sub>l-y</sub>As/GaAs multiple quantum well structures Journal of Crystal Growth. 127, 541- HUMBACH, O., STOHR, A., AUER, U., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1993. Strained-layer multiple quantum well InGaAs/GaAs waveguide modulators operating around 1µm IEEE Photonics Technology Letters. 5, 49- RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J. and FLEISSNER, J., 1993. Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers In: Institute of Physics Conference Series. 809-
WANG, Z.M., BAEUMLER, M., JANTZ, W., BACHEM, K.H., LARKINS, E.C. and RALSTON, J.D., 1993. Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures Journal of Crystal Growth. 126, 205- RALSTON, J. D., LARKINS, E. C., ROTHEMUND, W., ESQUIVAS, I., WEISSER, S., ROSENZWEIG, J. and FLEISSNER, J., 1993. Enhancements in MBE-grown High-speed GaAs an In0.35Ga0.65As MQW laser Structures using Binary Short-Period Superlattices Journal of Crystal Growth. 127(19),
WAGNER, J., LARKINS, E.C., HERRES, N., RALSTON, J.D. and KOIDL, P., 1993. Defect and strain redistribution in In<sub>x</sub>Ga<sub>l-x</sub>As/GaAs multiple quantum wells studied by resonant Raman scattering Applied Physics Letters. 63, 1842- RALSTON, J. D., WEISSER, S., ESQUIVAS, I., SCHONFELDER, A., LARKINS, E. C., ROSENZWEIG, J., TASKER, P. J., MAIER, M. and FLEISSNER, J., 1993. P-Dopant Incorporation and Influence on gain and Damping Behaviour in High-Speed GaAs-based Strained MQW Lasers In: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, at the 1993 E-MRS Spring Conference, 4th - 7th May 1993, Strasbourg, France..
LARKINS, E.C., BENDER, G., SCHNEIDER, H., RALSTON, J.D., WAGNER, J., ROTHEMUND, W., DISCHLER, B., FLEISSNER, J. and KOIDL, P., 1993. Strain-relaxed, high-speed In<sub>0.2</sub>Ga<sub>0.8</sub>As MQW p-i-n photodetectors grown by MBE Journal of Crystal Growth. 127, 62- RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., SCHONFELDER, A., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J., MAIER, M. and FLEISSNER, J., 1993. p-dopant incorporation and influence on gain and damping behavior in high-speed GaAs-based strained MQW lasers Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B21, 232-
RALSTON, J.D., WEISSER, S., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1993. 30 GHz direct modulation in p-doped In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW lasers In: Institute of Physics Conference Series. 949-
RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J. and FLEISSNER, J., 1993. Control of differential gain, nonlinear gain, and damping factor for high-speed applications of GaAs-based MQW lasers IEEE Journal of Quantum Electronics. 29, 1648- SCHNEIDER, H., LARKINS, E.C., RALSTON, J.D., FUCHS, F. and KOIDL, P., 1993. Space charge effects in photovoltaic double barrier quantum well infrared detectors Applied Physics Letters. 63, 782- STOHR, A., HUMBACH, O., ZUMKLEY, S., WINGEN, G., DAVID, G., BOLLIG, B., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1993. InGaAs/GaAs multiple-quantum-well modulators and switches Optical and Quantum Electronics. 25, S865- BENDER, G., LARKINS, E.C., SCHNEIDER, H., RALSTON, J.D. and KOIDL, P., 1993. Strain relaxation in high-speed p-i-n photodetectors with In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs multiple quantum wells Applied Physics Letters. 63, 2920- RALSTON, J.D., WEISSER, S., SCHONFELDER, A., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J. and TASKER, P.J., 1993. Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers In: IEEE LEOS 1993 Annual Meeting Proceedings. 637-
SEELMANN-EGGEBERT, M., FASEL, R., LARKINS, E.C. and OSTERWALDER, J., 1993. Monolayer resolved X-ray excited Auger electron diffraction from single plane emission in GaAs Physical Review B: Condensed Matter. 48, 838-
WINGEN, G., ZUMKLEY, S., DAVID, G., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1992. High-speed InGaAs/GaAs multiple quantum well electrooptical modulator In: IEEE LEOS 1992 Annual Meeting Proceedings. 694-
ESQUIVIAS, I., WEISSER, S., RALSTON, J.D., LARKINS, E.C., TASKER, P.J., ROSENZWEIG, J. and FLEISSNER, J., 1992. High-speed GaAs/AlGaAs multiple quantum well lasers: Design and characterization IEEE Transactions on Electron Devices. 39, 2660- RALSTON, J.D., WEISSER, S., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1992. Modulation bandwidths up to 30 GHz under CW bias in strained In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW lasers with p-doping In: Proceedings of 13th IEEE International Semiconductor Laser Conference 1992. 9-
SCHNEIDER, H., LARKINS, E.C., RALSTON, J.D., FLEISSNER, J., BENDER, G. and KOIDL, P., 1992. Diffusive electrical conduction in high-speed p-i-n photodetectors Applied Physics Letters. 60, 2648- RALSTON, J.D., ESQUIVIAS, I., WEISSER, S., TASKER, P.J., LARKINS, E.C., ROSENZWEIG, J., ZAPPE, H.P., FLEISSNER, J. and AS, D.J., 1992. 16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure In: Proceedings SPIE. 127-
ROSENZWEIG, J., RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., TASKER, P.J., LARKINS, E.C. and FLEISSNER, J., 1992. Performance comparison of high-speed GaAs/Al<sub>0.25</sub>Ga<sub>0.75</sub>As and In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs multiple quantum well lasers suitable for monolithic integration In: Proceedings of 18th European Conference on Optical Communications (ECOC) 1992. 261-
SCHONFELDER, A., WEISSER, S., RALSTON, J.D., LARKINS, E.C., ESQUIVIAS, I., FLEISSNER, J., TASKER, P.J. and ROSENZWEIG, J., 1992. Comparison of ultrahigh-speed (30 GHz) undoped and p-doped In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW lasers In: IEEE LEOS 1992 Annual Meeting Proceedings. PD1-
WEISSER, S., RALSTON, J.D., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1992. Efficient high-speed direct modulation in p-doped In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs multiple quantum well lasers Electronics Letters. 28, 2141- WEISSER, S., ESQUIVIAS, I., RALSTON, J.D., ROSENZWEIG, J., SCHONFELDER, A., LARKINS, E.C. and FLEISSNER, J., 1992. Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers In: Technical Digest of the International Electron Device Meeting 1992. 863-
WEISSER, S., RALSTON, J.D., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1992. High-frequency characterization of 30 GHz p-type modulation-doped In<sub>0.35</sub>Ga<sub>0.65</sub>As/GaAs MQW lasers In: Technical Digest of the International Electron Device Meeting 1992. 1009-
HUMBACH, O., STOHR, A., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1991. InGaAs/GaAs multiple quantum well electro-optic waveguide modulators In: IEEE LEOS 1991 Annual Meeting Proceedings.
MUNNIX, S., BIMBERG, D., MARS, D.E., LARKINS, E.C. and HARRIS, J.S., 1989. Observation of a many-body edge singularity in the luminescence spectra of GaAs/AlGaAs modulation doped heterostructures Acta Physica Polonica: Series A. 75, 33-
LEE, B., KIM, M.H., BOSE, S.S., STILLMAN, G.E., LARKINS, E.C., HELLMAN, E.S., SCHLOM, D.G. and HARRIS, J.S., 1989. Sulfur incorporation in undoped high purity n-type GaAs grown by molecular beam epitaxy In: Institute of Physics Conference Series. 23-
LARKINS, E.C., LIU, D., PAO, Y.C., LIN, M.J., YOFFE, G.W. and HARRIS, J.S., 1989. Characterization of AlGaAs and GaAs materials and interfaces grown on misoriented (110) GaAs by MBE In: Institute of Physics Conference Series. 53-
MUNNIX, S., BAUER, R.K., BIMBERG, D., HARRIS, J.S., KOHRBRUCK, R., LARKINS, E.C., MAIERHOFER, C. and MARS, D.E., 1989. Growth kinetics, impurity incorporation, defect generation and interface quality of MBE-grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes Journal of Vacuum Science and Technology B. 7, 704- MUNNIX, S., BIMBERG, D., MARS, D.E., LARKINS, E.C. and HARRIS, J.S., 1989. Optical properties of one- and two-component plasma in GaAs/AlGaAs n-modulation doped heterostructures Superlattices and Microstructures. 6, 369- KOHRBRUCK, R., MUNNIX, S., BIMBERG, D., LARKINS, E.C. and HARRIS, J.S., 1989. Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy Applied Physics Letters. 54, 623- LIU, D., ZHANG, T., LARKINS, E.C., CHIANG, T.T., LA RUE, R.A., HARRIS, J.S., SIGMON, T.W. and SPICER, W.E., 1989. Sodium sulfide treated (100) and (110) GaAs surfaces In: Institute of Physics Conference Series. 371-
KOHRBRUCK, R., MUNNIX, S., BIMBERG, D., LARKINS, E.C. and HARRIS, J.S., 1989. Flux ratio dependence of growth rate, interface quality, and impurity incorporation in MBE grown AlGaAs/GaAs quantum wells In: Institute of Physics Conference Series. 65-
LARKINS, E.C., PAO, Y.C., LIU, D., LIN, M.J. and HARRIS, J.S., 1988. Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by molecular-beam epitaxy Journal of Vacuum Science and Technology B. 6, 636- MUNNIX, S., BIMBERG, D., MARS, D.E., LARKINS, E.C. and HARRIS, J.S., 1988. High carrier densities in GaAs/AlGaAs modulation n-doped quantum wells: From one- to two- component plasma In: Proceedings of the 19th International Conference on the Physics of Semiconductor (ICPS).
LIN, M.J., LARKINS, E.C., PAO, Y.C., LIU, D., MA, T.K. and HARRIS, J.S., 1988. Characterization of Al<sub>0.25</sub>Ga<sub>0.75</sub>As grown by molecular beam epitaxy Journal of Vacuum Science and Technology B. 6, 631- LEE, B., BOSE, S.S., KIM, M.H., STILLMAN, G.E., WANG, W.I., LARKINS, E.C., HARRIS, J.S. and CALAWA, A.R., 1987. Residual impurities in high-purity undoped n-type MBE GaAs Journal of Electronic Materials. 16, A16-
LARKINS, E.C., HELLMAN, E.S., SCHLOM, D.G., HARRIS, J.S., KIM, M.H. and STILLMAN, G.E., 1987. GaAs with very low acceptor impurity background grown by molecular beam epitaxy Journal of Crystal Growth. 81, 344- LARKINS, E.C., HELLMAN, E.S., SCHLOM, D.G. and HARRIS, J.S., 1986. Ultra-high purity gallium arsenide (GaAs) grown by molecular beam epitaxy
LARKINS, E.C., HELLMAN, E.S., SCHLOM, D.G., HARRIS, J.S., KIM, M.H. and STILLMAN, G.E., 1986. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy Applied Physics Letters. 49, 391- LARKINS, E.C, Bistable Optical Laser Based on a Heterostructure PNPN Diode U.S Patent No. 5,349 09/01/1994 00:00:00
SCHNEIDER, H., RALSTON, J. and LARKINS, E., Quantentopf-Intersubband-Infrarot-Photodetektor German Patent No. P4 04/01/1993 00:00:00
LARKINS, E.C., Bistable Optical Laser Based on a Heterostructure PNPN Thyristor U.S patent No. 5,204 04/01/1993 00:00:00